This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated.
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