Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation

研究成果: ジャーナルへの寄稿学術誌査読

15 被引用数 (Scopus)

抄録

This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated.

本文言語英語
論文番号088002
ジャーナルJapanese journal of applied physics
56
8
DOI
出版ステータス出版済み - 8月 2017

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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