Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

In this paper, the turn-on characteristics of the 1.2 kV Trench IGBT (TIGBT) and the 1.2 kV Trench Clustered IGBT (TCIGBT) are investigated through TCAD simulations and experiments. The TCIGBT shows much lower turn-on energy loss (E on) due to higher current gain than an equivalent TIGBT and the negative gate capacitance effect is effectively suppressed in the TCIGBT by its self-clamping feature and PMOS action. In addition, the impact of 3D scaling rules on the turn-on performance of TIGBT and TCIGBT is analyzed in detail. Simulation results show that scaling rules result in a significant reduction of E on in both TIGBT and TCIGBT. Furthermore, the experimental results indicate that TCIGBT technology is well suited for high current density operations with low power losses. Compared to the state-of-the-art IGBT technology, an 18% reduction of total power loss can be achieved by the TCIGBT operated at 300 A cm-2 and 175 °C.