Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

H. Yang, J. Gao, H. Nakashima

    研究成果: ジャーナルへの寄稿記事

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    Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

    元の言語英語
    ページ(範囲)614-619
    ページ数6
    ジャーナルMaterials Science in Semiconductor Processing
    26
    発行部数1
    DOI
    出版物ステータス出版済み - 10 2014

      フィンガープリント

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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