Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

H. Yang, J. Gao, H. Nakashima

    研究成果: Contribution to journalArticle査読

    1 被引用数 (Scopus)

    抄録

    Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

    本文言語英語
    ページ(範囲)614-619
    ページ数6
    ジャーナルMaterials Science in Semiconductor Processing
    26
    1
    DOI
    出版ステータス出版済み - 10 2014

    All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

    フィンガープリント

    「Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル