Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

X. Q. Shen, P. Ramvall, P. Riblet, Y. Aoyagi, K. Hosi, Tanaka Satoru, I. Suemune

研究成果: ジャーナルへの寄稿Conference article

4 引用 (Scopus)

抄録

Optical and electrical properties of GaN films grown on α-Al2O3 (0 0 0 1) substrates by GSMBE using In-doping method were investigated. It was found that both of them were improved, compared to those of a nondoped GaN one. μ-PL results at 20 K indicated that In-doped films emit luminescence more uniformly than that of a nondoped one. Furthermore, Hall effect measurements at 300 K showed higher electron mobility of In-doped samples than that of a nondoped one. It is suggested that the presence of In during the growth of GaN films plays a role in reducing the number of structural imperfections to improve the optical and electrical properties.

元の言語英語
ページ(範囲)396-400
ページ数5
ジャーナルJournal of Crystal Growth
209
発行部数2-3
DOI
出版物ステータス出版済み - 1 1 2000
外部発表Yes
イベントThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
継続期間: 7 28 19997 30 1999

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Gas source molecular beam epitaxy
Electric properties
molecular beam epitaxy
Optical properties
electrical properties
optical properties
gases
Electron mobility
Hall effect
electron mobility
Luminescence
Doping (additives)
luminescence
Defects
defects
Substrates

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy. / Shen, X. Q.; Ramvall, P.; Riblet, P.; Aoyagi, Y.; Hosi, K.; Satoru, Tanaka; Suemune, I.

:: Journal of Crystal Growth, 巻 209, 番号 2-3, 01.01.2000, p. 396-400.

研究成果: ジャーナルへの寄稿Conference article

Shen, X. Q. ; Ramvall, P. ; Riblet, P. ; Aoyagi, Y. ; Hosi, K. ; Satoru, Tanaka ; Suemune, I. / Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy. :: Journal of Crystal Growth. 2000 ; 巻 209, 番号 2-3. pp. 396-400.
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T1 - Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

AU - Shen, X. Q.

AU - Ramvall, P.

AU - Riblet, P.

AU - Aoyagi, Y.

AU - Hosi, K.

AU - Satoru, Tanaka

AU - Suemune, I.

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AB - Optical and electrical properties of GaN films grown on α-Al2O3 (0 0 0 1) substrates by GSMBE using In-doping method were investigated. It was found that both of them were improved, compared to those of a nondoped GaN one. μ-PL results at 20 K indicated that In-doped films emit luminescence more uniformly than that of a nondoped one. Furthermore, Hall effect measurements at 300 K showed higher electron mobility of In-doped samples than that of a nondoped one. It is suggested that the presence of In during the growth of GaN films plays a role in reducing the number of structural imperfections to improve the optical and electrical properties.

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