Ion-beam induced defect formation in α-alumina with applied electric field

T. Higuchi, K. Yasuda, K. Tanaka, K. Shiiyama, C. Kinoshita

研究成果: ジャーナルへの寄稿会議記事査読

2 被引用数 (Scopus)


An attempt is made to understand the kinetic behavior of radiation-induced defects in α-Al2O3 irradiated with applied electric fields. To this end, a special device is developed for ion-beam irradiation on insulating ceramics at temperatures up to 920 K and with applied electric fields to 300 kV/m. We have found that electric fields of 100 and 300 kV/m influence the nucleation-and-growth process of defect clusters in α-Al2O3 irradiated with 100 keV He+ ions. The electric fields reduce the formation of interstitial-type dislocation loops at 760 K and retard the formation of defect clusters (probably vacancy-type clusters) at 870 K. Results are discussed in terms of the directed migration of interstitials and the recombination rate of vacancies and interstitials.

ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
出版ステータス出版済み - 5月 1 2003
イベント13th International conference on Ion beam modification of Mate - Kobe, 日本
継続期間: 9月 1 20029月 6 2002

!!!All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 器械工学


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