Ion-beam induced defect formation in α-alumina with applied electric field

T. Higuchi, K. Yasuda, K. Tanaka, K. Shiiyama, C. Kinoshita

研究成果: ジャーナルへの寄稿会議記事査読

2 被引用数 (Scopus)

抄録

An attempt is made to understand the kinetic behavior of radiation-induced defects in α-Al2O3 irradiated with applied electric fields. To this end, a special device is developed for ion-beam irradiation on insulating ceramics at temperatures up to 920 K and with applied electric fields to 300 kV/m. We have found that electric fields of 100 and 300 kV/m influence the nucleation-and-growth process of defect clusters in α-Al2O3 irradiated with 100 keV He+ ions. The electric fields reduce the formation of interstitial-type dislocation loops at 760 K and retard the formation of defect clusters (probably vacancy-type clusters) at 870 K. Results are discussed in terms of the directed migration of interstitials and the recombination rate of vacancies and interstitials.

本文言語英語
ページ(範囲)103-108
ページ数6
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
206
DOI
出版ステータス出版済み - 5月 1 2003
イベント13th International conference on Ion beam modification of Mate - Kobe, 日本
継続期間: 9月 1 20029月 6 2002

!!!All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 器械工学

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