Ion beam irradiation effects on a novolac positive-tone photoresist and its application to micron-size field emitters have been investigated. Irradiation of Ar and P ions was examined. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Baking of the photoresist prior to irradation at a high temperature is preferred to produce electrical conductivity. P ions show-weaker effects than Ar ions. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission of electrons is observed from emitters made of the ion-irradiated photoresist. The emission current is shown to be fairly stable when it is compared with an emission characteristic of synthesized diamond. Fabrication of field emitter arrays using a mold technique is demonstrated. The field emitter array shows emission at a current level of about 40 μA.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|号||12 SUPPL. B|
|出版ステータス||出版済み - 12月 1 1997|
!!!All Science Journal Classification (ASJC) codes