抄録
Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700 °C. Significant enhancement of crystal nucleation was observed under ion irradiation (25 keV, 1×1016 Ar+ cm-2). As a result, nucleation at a temperature lower than that of the softening of soda-lime glass (450 °C) becomes possible. In addition, nuclei growth along the [111] and [110] directions was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 104-106 |
| ページ数 | 3 |
| ジャーナル | Thin Solid Films |
| 巻 | 383 |
| 発行部数 | 1-2 |
| DOI | |
| 出版物ステータス | 出版済み - 2 15 2001 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
これを引用
Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2 . / Miyao, Masanobu; Tsunoda, Isao; Sadoh, Taizoh; Kenjo, Atsushi.
：: Thin Solid Films, 巻 383, 番号 1-2, 15.02.2001, p. 104-106.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2
AU - Miyao, Masanobu
AU - Tsunoda, Isao
AU - Sadoh, Taizoh
AU - Kenjo, Atsushi
PY - 2001/2/15
Y1 - 2001/2/15
N2 - Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700 °C. Significant enhancement of crystal nucleation was observed under ion irradiation (25 keV, 1×1016 Ar+ cm-2). As a result, nucleation at a temperature lower than that of the softening of soda-lime glass (450 °C) becomes possible. In addition, nuclei growth along the [111] and [110] directions was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates.
AB - Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700 °C. Significant enhancement of crystal nucleation was observed under ion irradiation (25 keV, 1×1016 Ar+ cm-2). As a result, nucleation at a temperature lower than that of the softening of soda-lime glass (450 °C) becomes possible. In addition, nuclei growth along the [111] and [110] directions was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates.
UR - http://www.scopus.com/inward/record.url?scp=0035247872&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035247872&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(00)01634-5
DO - 10.1016/S0040-6090(00)01634-5
M3 - Article
AN - SCOPUS:0035247872
VL - 383
SP - 104
EP - 106
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -