抄録
Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700 °C. Significant enhancement of crystal nucleation was observed under ion irradiation (25 keV, 1×1016 Ar+ cm-2). As a result, nucleation at a temperature lower than that of the softening of soda-lime glass (450 °C) becomes possible. In addition, nuclei growth along the [111] and [110] directions was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates.
本文言語 | 英語 |
---|---|
ページ(範囲) | 104-106 |
ページ数 | 3 |
ジャーナル | Thin Solid Films |
巻 | 383 |
号 | 1-2 |
DOI | |
出版ステータス | 出版済み - 2月 15 2001 |
!!!All Science Journal Classification (ASJC) codes
- 電子材料、光学材料、および磁性材料
- 表面および界面
- 表面、皮膜および薄膜
- 金属および合金
- 材料化学