Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2

Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Atsushi Kenjo

研究成果: ジャーナルへの寄稿記事

33 引用 (Scopus)

抄録

Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700 °C. Significant enhancement of crystal nucleation was observed under ion irradiation (25 keV, 1×1016 Ar+ cm-2). As a result, nucleation at a temperature lower than that of the softening of soda-lime glass (450 °C) becomes possible. In addition, nuclei growth along the [111] and [110] directions was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates.

元の言語英語
ページ(範囲)104-106
ページ数3
ジャーナルThin Solid Films
383
発行部数1-2
DOI
出版物ステータス出版済み - 2 15 2001

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Crystallization
Ion beams
solid phases
Nucleation
ion beams
nucleation
crystallization
Glass
glass
calcium oxides
Thin film transistors
Ion bombardment
ion irradiation
Lime
softening
transistors
Irradiation
Fabrication
X ray diffraction
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2 . / Miyao, Masanobu; Tsunoda, Isao; Sadoh, Taizoh; Kenjo, Atsushi.

:: Thin Solid Films, 巻 383, 番号 1-2, 15.02.2001, p. 104-106.

研究成果: ジャーナルへの寄稿記事

Miyao, Masanobu ; Tsunoda, Isao ; Sadoh, Taizoh ; Kenjo, Atsushi. / Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2 :: Thin Solid Films. 2001 ; 巻 383, 番号 1-2. pp. 104-106.
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