The crystalline quality of preferentially (111) oriented BaF2 films grown on amorphous SiO2 has been investigated by ion channeling measurements, as well as x-ray diffraction analyses and transmission electron microscopy (TEM). The films are grown by vacuum deposition onto heated (500-750°C) Si substrates covered with SiO2 films. It has been found that the channeling effect of MeV ions occurs in BaF2 films on SiO2 and that the minimum yield in the films grown at 700°C is as low as 9% near the surface. It has also been observed by TEM and x-ray analyses that the average size of the crystallites and the spread of the crystallite orientation in the good films are about 400 nm and 0.4°, respectively.
All Science Journal Classification (ASJC) codes