Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Hiroshi Ishiwara, Noriyuki Kaifu, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

抄録

The crystalline quality of preferentially (111) oriented BaF2 films grown on amorphous SiO2 has been investigated by ion channeling measurements, as well as x-ray diffraction analyses and transmission electron microscopy (TEM). The films are grown by vacuum deposition onto heated (500-750°C) Si substrates covered with SiO2 films. It has been found that the channeling effect of MeV ions occurs in BaF2 films on SiO2 and that the minimum yield in the films grown at 700°C is as low as 9% near the surface. It has also been observed by TEM and x-ray analyses that the average size of the crystallites and the spread of the crystallite orientation in the good films are about 400 nm and 0.4°, respectively.

元の言語英語
ページ(範囲)1184-1186
ページ数3
ジャーナルApplied Physics Letters
45
発行部数11
DOI
出版物ステータス出版済み - 12 1 1984

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ions
transmission electron microscopy
vacuum deposition
crystallites
x ray diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates. / Ishiwara, Hiroshi; Kaifu, Noriyuki; Asano, Tanemasa.

:: Applied Physics Letters, 巻 45, 番号 11, 01.12.1984, p. 1184-1186.

研究成果: ジャーナルへの寄稿記事

Ishiwara, Hiroshi ; Kaifu, Noriyuki ; Asano, Tanemasa. / Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates. :: Applied Physics Letters. 1984 ; 巻 45, 番号 11. pp. 1184-1186.
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