ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.

Tanemasa Asano, Hiroshi Ishiwara, Kouzo Orihara

研究成果: 会議への寄与タイプ論文

抄録

In order to fabricate electronic devices in the Si/CaF//2/Si structures, it is necessary to investigate ion irradiation effects in CaF//2 films, since ion beam processes such as ion implantation are often used in the device fabrication. In the present work, radiation damage in epitaxial CaF//2 films on Si substrates produced by Ar** plus ion implantation and its annealing behavior are investigated.

元の言語英語
ページ1845-1848
ページ数4
出版物ステータス出版済み - 12 1 1983
外部発表Yes

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Ion bombardment
Ion implantation
Radiation damage
Ion beams
Annealing
Fabrication
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Asano, T., Ishiwara, H., & Orihara, K. (1983). ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.. 1845-1848.

ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si. / Asano, Tanemasa; Ishiwara, Hiroshi; Orihara, Kouzo.

1983. 1845-1848.

研究成果: 会議への寄与タイプ論文

Asano, T, Ishiwara, H & Orihara, K 1983, 'ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.' pp. 1845-1848.
Asano T, Ishiwara H, Orihara K. ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.. 1983.
Asano, Tanemasa ; Ishiwara, Hiroshi ; Orihara, Kouzo. / ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si. 4 p.
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