ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.

Tanemasa Asano, Hiroshi Ishiwara, Kouzo Orihara

研究成果: Contribution to conferencePaper

抜粋

In order to fabricate electronic devices in the Si/CaF//2/Si structures, it is necessary to investigate ion irradiation effects in CaF//2 films, since ion beam processes such as ion implantation are often used in the device fabrication. In the present work, radiation damage in epitaxial CaF//2 films on Si substrates produced by Ar** plus ion implantation and its annealing behavior are investigated.

元の言語英語
ページ1845-1848
ページ数4
出版物ステータス出版済み - 12 1 1983

All Science Journal Classification (ASJC) codes

  • Engineering(all)

フィンガープリント ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Asano, T., Ishiwara, H., & Orihara, K. (1983). ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.. 1845-1848.