抄録
Changes in chemical states of amorphous carbon film during ethylene (C 2 H 4 ) plasma in the floating potential were investigated with multiple-internal-reflection infrared absorption spectroscopy (MIR-IRAS) and deposition rates. IRAS spectra showed that the peaks due to the sp 3 -CH X were observed, but no peaks due to sp 2 -CH X were observed. The deposition rate due to ethylene plasma was nearly twice that due to methane plasma, in the same way that the number of carbons in an ethylene molecule is twice as that in a methane molecule. It is suggested that the film growth due to ethylene plasma is the same manner of that due to methane plasma; the plasma-generated hydrocarbon species such as C 2 H 3 and C 2 H 5 , which are generated in ethylene plasma, are adsorbed on dangling bonds that are generated by hydrogen abstraction from the deposited film surface. As a result, the deposited film is composed of sp 3 -hydrocarbon components.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | 10-17 |
| ページ数 | 8 |
| ジャーナル | Electronics and Communications in Japan |
| 巻 | 102 |
| 号 | 4 |
| DOI | |
| 出版ステータス | 出版済み - 4月 2019 |
| 外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 信号処理
- 物理学および天文学（全般）
- コンピュータ ネットワークおよび通信
- 電子工学および電気工学
- 応用数学