Island formation of SiC film on striated Si(001) substrates

Yoshimine Kato, Kazuo Sakumoto

    研究成果: 書籍/レポート タイプへの寄稿会議への寄与

    1 被引用数 (Scopus)

    抄録

    SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using monomethylsilane as a gas source at 780°C. Two kinds of Si surfaces were prepared. One was an as-received Si(001) surface and the other was an striated (scratched) Si(001) surface. It was found that nucleation rate of SiC is quite different between these two kinds of surfaces. The film growth rate was very low for the as-received Si(001) surface compared with the striated surface, and after 8 hours of growth hardly any film was grown and only square-shaped islands were observed. On the other hand, for the undulant substrate about 100nm thick 3C-SiC film was grown after 8 hours of deposition. This film growth rate difference appears to be due to the difference in density of nucleation sites. For the as-received Si(001) surface, nucleation site density appears to be quite small due to the atomically flat surface. On the other hand, for the undulant surface, nucleation site density was large enough for the film to grow faster.

    本文言語英語
    ホスト出版物のタイトルSilicon Carbide and Related Materials 2007
    編集者Takashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
    出版社Trans Tech Publications Ltd
    ページ227-230
    ページ数4
    ISBN(印刷版)9780878493579
    出版ステータス出版済み - 1月 1 2009
    イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, 日本
    継続期間: 10月 14 200710月 19 2007

    出版物シリーズ

    名前Materials Science Forum
    600-603
    ISSN(印刷版)0255-5476

    その他

    その他12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
    国/地域日本
    CityOtsu
    Period10/14/0710/19/07

    !!!All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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