Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

Y. Inatomi, Y. Kangawa, A. Pimpinelli, T. L. Einstein

研究成果: ジャーナルへの寄稿学術誌査読

7 被引用数 (Scopus)

抄録

Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.

本文言語英語
論文番号013401
ジャーナルPhysical Review Materials
3
1
DOI
出版ステータス出版済み - 1月 2 2019

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 物理学および天文学(その他)

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