KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers

Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Toshiaki Nonaka, Hiroshi Ikenoue, Yukiharu Uraoka

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

We show how KrF excimer laser annealing (ELA) can be used as a low temperature annealing process to improve the properties of passivated amorphous InGaZnO thin-film transistors. We analyzed the effect of KrF ELA on the electrical properties, physical structure, chemical bonding and composition of a-InGaZnO.

元の言語英語
ホスト出版物のタイトル22nd International Display Workshops, IDW 2015
出版者International Display Workshops
ページ53-54
ページ数2
ISBN(電子版)9781510845503
出版物ステータス出版済み - 1 1 2015
イベント22nd International Display Workshops, IDW 2015 - Otsu, 日本
継続期間: 12 9 201512 11 2015

出版物シリーズ

名前Proceedings of the International Display Workshops
1
ISSN(印刷物)1883-2490

その他

その他22nd International Display Workshops, IDW 2015
日本
Otsu
期間12/9/1512/11/15

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

これを引用

Bermundo, J. P., Ishikawa, Y., Fujii, M. N., Nonaka, T., Ikenoue, H., & Uraoka, Y. (2015). KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers. : 22nd International Display Workshops, IDW 2015 (pp. 53-54). (Proceedings of the International Display Workshops; 巻数 1). International Display Workshops.