抄録
Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 102106 |
| ジャーナル | Applied Physics Letters |
| 巻 | 105 |
| 発行部数 | 10 |
| DOI | |
| 出版物ステータス | 出版済み - 9 8 2014 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
これを引用
Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth. / Matsumura, Ryo; Kato, Ryusuke; Sadoh, Taizoh; Miyao, Masanobu.
：: Applied Physics Letters, 巻 105, 番号 10, 102106, 08.09.2014.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth
AU - Matsumura, Ryo
AU - Kato, Ryusuke
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2014/9/8
Y1 - 2014/9/8
N2 - Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.
AB - Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.
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U2 - 10.1063/1.4895512
DO - 10.1063/1.4895512
M3 - Article
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
M1 - 102106
ER -