Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Ryo Matsumura, Ryusuke Kato, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle

8 被引用数 (Scopus)

抄録

Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.

本文言語英語
論文番号102106
ジャーナルApplied Physics Letters
105
10
DOI
出版ステータス出版済み - 9 8 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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