TY - JOUR
T1 - Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth
AU - Matsumura, Ryo
AU - Kato, Ryusuke
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Publisher Copyright:
© 2014 AIP Publishing LLC.
PY - 2014/9/8
Y1 - 2014/9/8
N2 - Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.
AB - Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.
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U2 - 10.1063/1.4895512
DO - 10.1063/1.4895512
M3 - Article
AN - SCOPUS:84907033628
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
M1 - 102106
ER -