Large metal halide perovskite crystals for field-effect transistor applications

Toshinori Matsushima, Matthew R. Leyden, Takashi Fujihara, Chuanjiang Qin, Atula S.D. Sandanayaka, Chihaya Adachi

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

The material 2-phenylethylammonium tin iodide perovskite (C6H5C2H4NH3)2SnI4 [abbreviated as (PEA)2SnI4] has shown promising performance as a polycrystalline semiconductor for field-effect transistors (FETs). However, grain boundaries and structural disorder in polycrystalline films limit performance, and so the fundamental upper bounds of the material are yet to be studied. Here, we prepared large crystals of (PEA)2SnI4 for FETs and demonstrated carrier mobilities of 40 cm2 V-1 s-1 or higher, although with a low fabrication yield (< 1%). Our crystal FETs were very stable when stored in air and when operated under a bias in vacuum. The FET characteristics were superior to those of reported FETs based on polycrystalline perovskite films, and these results contribute to a better understanding of basic carrier transport mechanisms in hybrid perovskite materials.

本文言語英語
論文番号120601
ジャーナルApplied Physics Letters
115
12
DOI
出版ステータス出版済み - 9 16 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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