Laser direct patterning of Si films by Ag-induced layer exchange

Masahiro Kiyooka, Hiroshi Ikenoue

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Direct patterning of Si films is one of promising methods for TFT display fabrication to achieve low cost. We have proposed laser direct patterning of Si films by Ag-induced layer exchange. In this method, an Ag film was deposited for middle layer between an a-Si film and a substrate. Next, pulsed laser was locally irradiated to the Si/Ag film, and the Ag film was segregated to Si film surface. After that, the Ag film at irradiation area and the Ag film of middle layer at non-irradiation area were etched off by nitric acid treatment. In the result, direct patterning of Si thin films can be achieved at laser irradiation area. Moreover, in order to observe segregation behavior of Ag to Si surface, CW laser was coaxially inserted to surface with the pulsed laser, and reflective intensity of the CW laser was measured by Si-photo detector.

本文言語英語
ホスト出版物のタイトルIMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai
ページ72-73
ページ数2
DOI
出版ステータス出版済み - 2011
外部発表はい
イベント9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011 - Osaka, 日本
継続期間: 5月 19 20115月 20 2011

その他

その他9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011
国/地域日本
CityOsaka
Period5/19/115/20/11

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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