Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction

K. Kubo, K. Okazaki, T. Shimogaki, K. Tsuta, Daisuke Nakamura, M. Higashihata, T. Okada

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We have investigated the laser nano-welding between n-type ZnO nanowires and the ptype GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to weld the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nanowires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence intensity were clearly observed, demonstrating the effectiveness of the nano-welding in fabrication the hetero p-n junction between the ZnO nanowires and the GaN thin film.

本文言語英語
ホスト出版物のタイトルConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
ページ571-573
ページ数3
出版ステータス出版済み - 12 1 2011
イベントConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, オーストラリア
継続期間: 8 28 20119 1 2011

出版物シリーズ

名前Optics InfoBase Conference Papers
ISSN(電子版)2162-2701

その他

その他Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
国/地域オーストラリア
CitySydney
Period8/28/119/1/11

All Science Journal Classification (ASJC) codes

  • 器械工学
  • 原子分子物理学および光学

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