Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

J. Brault, S. Tanaka, E. Sarigiannidou, H. Nakagawa, J. L. Rouvière, G. Feuillet, B. Daudin

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.

本文言語英語
ページ(範囲)939-942
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
234
3
DOI
出版ステータス出版済み - 12 1 2002
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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