The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.
|ジャーナル||Physica Status Solidi (B) Basic Research|
|出版ステータス||出版済み - 12 1 2002|
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