Layer-by-layer growth of SiC at low temperatures

J. J. Sumakeris, L. B. Rowland, R. S. Kern, S. Tanaka, R. F. Davis

研究成果: Contribution to journalArticle査読

23 被引用数 (Scopus)

抄録

A novel reactor for layer-by-layer deposition of compound semiconductors has been designed and commissioned for the deposition of SiC. The substrates rested on a heated, rotating platform. They encountered individual fluxes of Si2H6 and C2H4 and subsequently paused beneath a hot filament. The filament was used to encourage the surface reaction between silicon adatoms and carbon precursors. Heteroepitaxial films were grown between 850 and 980 °C on Si(100) substrates oriented 3° off-axis toward 〈011〉. They were analyzed for composition, crystallinity, growth per cycle, and morphology using depth profiling Auger spectroscopy, reflection high-energy electron diffraction, ellipsometry and transmission electron microscopy. Growth, as measured by ellipsometry and transmission electron microscopy, corresponded to approximately one monolayer per cycle. Monocrystalline films were achieved. Initial growth and characterization results of representative films are presented and discussed.

本文言語英語
ページ(範囲)219-224
ページ数6
ジャーナルThin Solid Films
225
1-2
DOI
出版ステータス出版済み - 3 25 1993
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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