Leakage current characteristics of thick cubic boron nitride films deposited on titanium

S. Kawamoto, T. Nakakuma, K. Teii, S. Matsumoto

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Thick cubic and sp2-bonded boron nitride (cBN and sp2BN) films are deposited on Ti substrates by plasma jet enhanced chemical vapor deposition using the chemistry of fluorine, and their direct current-voltage characteristics are studied for Ni-BN-Ti capacitor structures. The resistivity of the cBN film measured at room temperature is of the order of 108 Ωcm, which is three to four orders of magnitude lower than that of the sp2BN film. At high electric fields, Frenkel-Poole emission dominates the conduction of the sp2BN film, while thermionic emission is better able to describe the conduction of the cBN film at temperatures up to 473 K. A lower leakage current indicates lower densities of carriers and trap sites associated with defects, suggesting that a higher-quality cBN film with higher crystallinity and stoichiometry is potentially promising as an ultrahard dielectric material in high temperature condition.

本文言語英語
論文番号225108
ジャーナルJournal of Applied Physics
122
22
DOI
出版ステータス出版済み - 12 14 2017

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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