Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

J. Brault, Tanaka Satoru, E. Sarigiannidou, J. L. Rouvière, B. Daudin, G. Feuillet, H. Nakagawa

研究成果: ジャーナルへの寄稿記事

22 引用 (Scopus)

抄録

The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.

元の言語英語
ページ(範囲)3108-3110
ページ数3
ジャーナルJournal of Applied Physics
93
発行部数5
DOI
出版物ステータス出版済み - 3 1 2003
外部発表Yes

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alignment
quantum dots
spatial distribution
molecular beam epitaxy
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Brault, J., Satoru, T., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G., & Nakagawa, H. (2003). Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics, 93(5), 3108-3110. https://doi.org/10.1063/1.1538334

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. / Brault, J.; Satoru, Tanaka; Sarigiannidou, E.; Rouvière, J. L.; Daudin, B.; Feuillet, G.; Nakagawa, H.

:: Journal of Applied Physics, 巻 93, 番号 5, 01.03.2003, p. 3108-3110.

研究成果: ジャーナルへの寄稿記事

Brault, J, Satoru, T, Sarigiannidou, E, Rouvière, JL, Daudin, B, Feuillet, G & Nakagawa, H 2003, 'Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates', Journal of Applied Physics, 巻. 93, 番号 5, pp. 3108-3110. https://doi.org/10.1063/1.1538334
Brault J, Satoru T, Sarigiannidou E, Rouvière JL, Daudin B, Feuillet G その他. Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics. 2003 3 1;93(5):3108-3110. https://doi.org/10.1063/1.1538334
Brault, J. ; Satoru, Tanaka ; Sarigiannidou, E. ; Rouvière, J. L. ; Daudin, B. ; Feuillet, G. ; Nakagawa, H. / Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. :: Journal of Applied Physics. 2003 ; 巻 93, 番号 5. pp. 3108-3110.
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