Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures

Susanne Hoffmann-Eifert, Takayuki Watanabe, Cheol Seong Hwang, Rainer Waser

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Quaternary Pb(Zr,Ti)Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, TiOx, and ZrOx thin films. To find the optimum set of precursors different combinations of five precursors were tested: Pb(C 11H19O2)2 [Pb(DPM)2], Ti(OC3H7)2(C11H19O 2)2 [Ti(Oi-Pr)2(DPM)2] or Ti(OC 3H7)4 [Ti(Oi-Pr)4], and Zr(C 11H19O2)4 [Zr(DPM)4] or Zr(C9H15O2)4 [Zr(DIBM)4]. Each precursor was dissolved in ethylcyclohexane (ECH) and was separately injected into a vaporizer. Water vapor was used as oxidant. The deposition rates of the metal elements were investigated as a function of the input of the solutions. Using the set of 0.1M Pb(DPM)2, Ti(Oi-Pr)4, and Zr(DIBM)4 solutions resulted in PZT films with good uniformity on 3D structured substrates. The Zr to Ti ratio in the as-deposited PZT films could be adjusted in the range up to Zr/Ti =1. This study suggests that the multi-layer stacking liquid delivery ALD process is an effective method for building up homogeneous layers of multi-component materials on desired 3D structures.

本文言語英語
ホスト出版物のタイトル17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOI
出版ステータス出版済み - 12 1 2008
外部発表はい
イベント17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, 米国
継続期間: 2 23 20082 28 2008

出版物シリーズ

名前IEEE International Symposium on Applications of Ferroelectrics
2

その他

その他17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country米国
CitySanta Fe, NM
Period2/23/082/28/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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