Liquid-solid coexisting annealing of a-GeSn/Si(100) structure for low temperature epitaxial growth of SiGe

H. Chikita, R. Matsumura, T. Sadoh, M. Miyao

研究成果: ジャーナルへの寄稿学術誌査読

抄録

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si(100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

本文言語英語
ページ(範囲)257-262
ページ数6
ジャーナルECS Transactions
58
9
DOI
出版ステータス出版済み - 2013

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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