Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation

Dong Wang, Haigui Yang, Jun Morioka, Tokuhide Kitamura, Hiroshi Nakashima

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

UV laser excited microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes (FSSMs), which can be applied to the fabrication of high performance radiofrequency (RF) power amplifier. The FSSMs were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure chemical vapor deposition. By the optimization of optics, we successfully observed PLs for FSSMs by a 325 nm laser excitation, which eliminated the substrate-related PL (S-PL) and improved the accuracy of the identification for PL peaks. Strain-induced band gap narrowing was directly observed by identifying the PL peak of the free exciton band-band transition in membranes, from which the strain ratio was estimated for each sample. Strain was reasonably dependent on the sample parameters, which implies that this measurement gives valid results. Based on the improved accuracy of PL peak identification by a UV laser excitation, a minor revision of the strain ratio results was also performed for our previous report for the same samples, which were measured by a 514 nm laser excited PL.

本文言語英語
ホスト出版物のタイトルICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ページ684-687
ページ数4
DOI
出版ステータス出版済み - 2008
イベント2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, 中国
継続期間: 10 20 200810 23 2008

出版物シリーズ

名前International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

その他

その他2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
国/地域中国
CityBeijing
Period10/20/0810/23/08

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料

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