A new technique of controlling the location and orientation of Si grain by combining metal-induced lateral crystallization (MILC) and excimer laser annealing (ELA) is proposed. A starting amorphous Si (a-Si) film is deposited on a SiO2 substrate having shallow pits. MILC is used to crystallize the a-Si film in a highly oriented polycrystal. ELA is used to recrystallize the highly oriented polycrystalline Si film. ELA produces large Si grains at the shallow pit sites because temperature gradient is generated by slanting Si surface on the slope of the pit. Si grains whose size is approximately 1.6 μm were formed at the pit sites. Electron backscatter diffraction pattern (EBSP) analysis showed that the crystal orientation aligned over the grain boundary.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版物ステータス||出版済み - 5 25 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)