Location and orientation control of Si grain by combining metal-induced lateral crystallization and excimer laser annealing

Naoyuki Higashi, Gou Nakagawa, Tanemasa Asano, Mitsutoshi Miyasaka, John Stoemenos

研究成果: Contribution to journalArticle

15 引用 (Scopus)

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A new technique of controlling the location and orientation of Si grain by combining metal-induced lateral crystallization (MILC) and excimer laser annealing (ELA) is proposed. A starting amorphous Si (a-Si) film is deposited on a SiO2 substrate having shallow pits. MILC is used to crystallize the a-Si film in a highly oriented polycrystal. ELA is used to recrystallize the highly oriented polycrystalline Si film. ELA produces large Si grains at the shallow pit sites because temperature gradient is generated by slanting Si surface on the slope of the pit. Si grains whose size is approximately 1.6 μm were formed at the pit sites. Electron backscatter diffraction pattern (EBSP) analysis showed that the crystal orientation aligned over the grain boundary.

元の言語英語
ページ(範囲)4347-4350
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数5 B
DOI
出版物ステータス出版済み - 5 25 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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