Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs

Hideya Kumomi, Hiroaki Wakiyama, Gou Nakagawa, Kenji Makihira, Tanemasa Asano

研究成果: ジャーナルへの寄稿会議記事査読

抄録

Location of crystal grains is controlled in excimer laser crystallization (ELC) of amorphous Si (a-Si) thin films, aiming at a high-performance single-grain thin film transistor (TFT) whose channel is inside a single crystal grain with no grain boundary in the channel. The location control is achieved by manipulating seed-crystal forming sites in the starting thin film. The sites are small portions of the a-Si thin film, typically 1 μm in diameter, only in which nanometer-sized crystallites are embedded in the amorphous matrix. During the ELC, at least one crystallite survives the melting duration and serves as a seed crystal for the resolidification of the surrounding molten silicon. As a result, large crystal grains are formed at the predetermined sites. The TFTs whose channels are fabricated at the location-controlled crystal grains exhibit higher performance than the random polycrystalline Si (poly-Si) TFTs.

本文言語英語
ページ(範囲)277-282
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
808
DOI
出版ステータス出版済み - 1月 1 2004
イベントAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, 米国
継続期間: 4月 13 20044月 16 2004

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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