Bistable bit state changes of a magnetic-RAM memory cell (2 × 5 μm2) made with a high sensitive spin valve material were performed with pulsed conductor currents Iw of 5,5 mA/μm for parallel to antiparallel and 3,0 mA/μm for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1-2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0,5 mA due to the MR change of 3 %, A threshold of Iw for the state change was decreased 20 % by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering