Low-Energy Ion-Assisted Deposition of Boron Nitride Films in Surface-Wave Plasma

M. Torigoe, K. Teii, S. Matsumoto

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

A surface-wave plasma operated at 2.45-GHz microwave (MW) is used to deposit hexagonal boron nitride (hBN) films by applying a negative or positive bias voltage to a substrate. Ion energy and flux onto the substrate are examined in terms of MW power, pressure, substrate location, and substrate bias. The mean ion energy is estimated from the sheath potential measured with a Langmuir probe and controlled between a few electronvolts and 170 eV. hBN films are deposited on silicon in a gas mixture of He, N, H, and BFN by varying either the ion energy or substrate temperature under a high ion flux condition (1017 cm-2s-1). The results show that the crystallinity of sp2-bonding network in the films depends upon ion energy more than substrate temperature.

本文言語英語
論文番号7762178
ページ(範囲)3219-3222
ページ数4
ジャーナルIEEE Transactions on Plasma Science
44
12
DOI
出版ステータス出版済み - 12 2016

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 凝縮系物理学

フィンガープリント

「Low-Energy Ion-Assisted Deposition of Boron Nitride Films in Surface-Wave Plasma」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル