Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

Kiichi Hamamoto, E. Gini, H. Melchior

研究成果: 著書/レポートタイプへの貢献会議での発言

5 引用 (Scopus)

抜粋

A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.

元の言語英語
ホスト出版物のタイトルConference Proceedings - International Conference on Indium Phosphide and Related Materials
ページ136-139
ページ数4
出版物ステータス出版済み - 2001
外部発表Yes
イベント2001 International Conference on Indium Phosphide and Related Materials - Nara, 日本
継続期間: 5 14 20015 18 2001

その他

その他2001 International Conference on Indium Phosphide and Related Materials
日本
Nara
期間5/14/015/18/01

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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  • これを引用

    Hamamoto, K., Gini, E., & Melchior, H. (2001). Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. : Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 136-139)