Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

Kiichi Hamamoto; E. Gini; H. Melchior

Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.

本文言語	英語
ホスト出版物のタイトル	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ページ	136-139
ページ数	4
出版ステータス	出版済み - 2001
外部発表	はい
イベント	2001 International Conference on Indium Phosphide and Related Materials - Nara, 日本継続期間: 5月 14 2001 → 5月 18 2001

その他

その他	2001 International Conference on Indium Phosphide and Related Materials
国/地域	日本
City	Nara
Period	5/14/01 → 5/18/01

!!!All Science Journal Classification (ASJC) codes

材料科学（全般）
物理学および天文学（全般）

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引用スタイル

@inproceedings{004bee8b83ee4653a30e3278b7962cd6,

title = "Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching",

abstract = "A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.",

author = "Kiichi Hamamoto and E. Gini and H. Melchior",

year = "2001",

language = "English",

pages = "136--139",

booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

note = "2001 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2001 Through 18-05-2001",

}

TY - GEN

T1 - Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

AU - Hamamoto, Kiichi

AU - Gini, E.

AU - Melchior, H.

PY - 2001

Y1 - 2001

N2 - A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.

AB - A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.

UR - http://www.scopus.com/inward/record.url?scp=0034840998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034840998&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034840998

SP - 136

EP - 139

BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2001 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2001 through 18 May 2001

ER -

Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

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その他

!!!All Science Journal Classification (ASJC) codes

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