抄録
A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.
本文言語 | 英語 |
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ホスト出版物のタイトル | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
ページ | 136-139 |
ページ数 | 4 |
出版ステータス | 出版済み - 2001 |
外部発表 | はい |
イベント | 2001 International Conference on Indium Phosphide and Related Materials - Nara, 日本 継続期間: 5月 14 2001 → 5月 18 2001 |
その他
その他 | 2001 International Conference on Indium Phosphide and Related Materials |
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国/地域 | 日本 |
City | Nara |
Period | 5/14/01 → 5/18/01 |
!!!All Science Journal Classification (ASJC) codes
- 材料科学(全般)
- 物理学および天文学(全般)