抜粋
A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.
| 元の言語 | 英語 |
|---|---|
| ホスト出版物のタイトル | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| ページ | 136-139 |
| ページ数 | 4 |
| 出版物ステータス | 出版済み - 2001 |
| 外部発表 | Yes |
| イベント | 2001 International Conference on Indium Phosphide and Related Materials - Nara, 日本 継続期間: 5 14 2001 → 5 18 2001 |
その他
| その他 | 2001 International Conference on Indium Phosphide and Related Materials |
|---|---|
| 国 | 日本 |
| 市 | Nara |
| 期間 | 5/14/01 → 5/18/01 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
フィンガープリント Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Hamamoto, K., Gini, E., & Melchior, H. (2001). Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. ： Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 136-139)