(1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.
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