Low-phase-noise, high switching speed digitally controlled ring oscillator in 0.18μm complementary metal oxide semiconductor

Abhishek Tomar, Shashank Lingala, Ramesh Pokharel, Haruichi Kanaya, Keiji Yoshida

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

In this paper a 14-bit digitally controlled oscillator (DCO) with operating frequency up to 4.2 GHz in 0.18 μm complementary metal oxide semiconductor (CMOS) technology is presented. To improve the phase noise, digital control is used that avoids continuous conduction of transistors and controlling transistors operate either in triode or cutoff region. The circuit uses multiple-loop feed forward architecture to increase the switching speed. The DCO has a wide frequency tuning range from 490 MHz to 4.2 GHz. The measured phase noise of the DCO is μ121.2 dBc/Hz at a 4-MHz offset from a 3.86-GHz center frequency and power consumption of 48 mW. Due to the phase noise reduction and high switching speed, the DCO has a μ164.1 dBc/Hz figure of merit (FOM) that is an improvement of μ4 dBc/Hz over the previously published results in the same technology. The chip area is 300 × 300 μm2.

元の言語英語
記事番号04DE10
ジャーナルJapanese Journal of Applied Physics
50
発行部数4 PART 2
DOI
出版物ステータス出版済み - 4 2011

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Phase noise
CMOS
oscillators
rings
Transistors
Metals
Triodes
transistors
Noise abatement
triodes
Electric power utilization
Tuning
noise reduction
figure of merit
cut-off
Networks (circuits)
chips
tuning
conduction
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Low-phase-noise, high switching speed digitally controlled ring oscillator in 0.18μm complementary metal oxide semiconductor. / Tomar, Abhishek; Lingala, Shashank; Pokharel, Ramesh; Kanaya, Haruichi; Yoshida, Keiji.

:: Japanese Journal of Applied Physics, 巻 50, 番号 4 PART 2, 04DE10, 04.2011.

研究成果: ジャーナルへの寄稿記事

@article{9830a910d82c4a32940adeb45a8252b8,
title = "Low-phase-noise, high switching speed digitally controlled ring oscillator in 0.18μm complementary metal oxide semiconductor",
abstract = "In this paper a 14-bit digitally controlled oscillator (DCO) with operating frequency up to 4.2 GHz in 0.18 μm complementary metal oxide semiconductor (CMOS) technology is presented. To improve the phase noise, digital control is used that avoids continuous conduction of transistors and controlling transistors operate either in triode or cutoff region. The circuit uses multiple-loop feed forward architecture to increase the switching speed. The DCO has a wide frequency tuning range from 490 MHz to 4.2 GHz. The measured phase noise of the DCO is μ121.2 dBc/Hz at a 4-MHz offset from a 3.86-GHz center frequency and power consumption of 48 mW. Due to the phase noise reduction and high switching speed, the DCO has a μ164.1 dBc/Hz figure of merit (FOM) that is an improvement of μ4 dBc/Hz over the previously published results in the same technology. The chip area is 300 × 300 μm2.",
author = "Abhishek Tomar and Shashank Lingala and Ramesh Pokharel and Haruichi Kanaya and Keiji Yoshida",
year = "2011",
month = "4",
doi = "10.1143/JJAP.50.04DE10",
language = "English",
volume = "50",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "4 PART 2",

}

TY - JOUR

T1 - Low-phase-noise, high switching speed digitally controlled ring oscillator in 0.18μm complementary metal oxide semiconductor

AU - Tomar, Abhishek

AU - Lingala, Shashank

AU - Pokharel, Ramesh

AU - Kanaya, Haruichi

AU - Yoshida, Keiji

PY - 2011/4

Y1 - 2011/4

N2 - In this paper a 14-bit digitally controlled oscillator (DCO) with operating frequency up to 4.2 GHz in 0.18 μm complementary metal oxide semiconductor (CMOS) technology is presented. To improve the phase noise, digital control is used that avoids continuous conduction of transistors and controlling transistors operate either in triode or cutoff region. The circuit uses multiple-loop feed forward architecture to increase the switching speed. The DCO has a wide frequency tuning range from 490 MHz to 4.2 GHz. The measured phase noise of the DCO is μ121.2 dBc/Hz at a 4-MHz offset from a 3.86-GHz center frequency and power consumption of 48 mW. Due to the phase noise reduction and high switching speed, the DCO has a μ164.1 dBc/Hz figure of merit (FOM) that is an improvement of μ4 dBc/Hz over the previously published results in the same technology. The chip area is 300 × 300 μm2.

AB - In this paper a 14-bit digitally controlled oscillator (DCO) with operating frequency up to 4.2 GHz in 0.18 μm complementary metal oxide semiconductor (CMOS) technology is presented. To improve the phase noise, digital control is used that avoids continuous conduction of transistors and controlling transistors operate either in triode or cutoff region. The circuit uses multiple-loop feed forward architecture to increase the switching speed. The DCO has a wide frequency tuning range from 490 MHz to 4.2 GHz. The measured phase noise of the DCO is μ121.2 dBc/Hz at a 4-MHz offset from a 3.86-GHz center frequency and power consumption of 48 mW. Due to the phase noise reduction and high switching speed, the DCO has a μ164.1 dBc/Hz figure of merit (FOM) that is an improvement of μ4 dBc/Hz over the previously published results in the same technology. The chip area is 300 × 300 μm2.

UR - http://www.scopus.com/inward/record.url?scp=79955460939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955460939&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.04DE10

DO - 10.1143/JJAP.50.04DE10

M3 - Article

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 PART 2

M1 - 04DE10

ER -