抄録
Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.
| 元の言語 | 英語 |
|---|---|
| ジャーナル | Electrochemical and Solid-State Letters |
| 巻 | 14 |
| 発行部数 | 7 |
| DOI | |
| 出版物ステータス | 出版済み - 6 29 2011 |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering
- Electrochemistry
これを引用
Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator. / Sadoh, Taizoh; Kurosawa, Masashi; Hagihara, Takashi; Toko, Kaoru; Miyao, Masanobu.
：: Electrochemical and Solid-State Letters, 巻 14, 番号 7, 29.06.2011.研究成果: ジャーナルへの寄稿 › 記事
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TY - JOUR
T1 - Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator
AU - Sadoh, Taizoh
AU - Kurosawa, Masashi
AU - Hagihara, Takashi
AU - Toko, Kaoru
AU - Miyao, Masanobu
PY - 2011/6/29
Y1 - 2011/6/29
N2 - Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.
AB - Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.
UR - http://www.scopus.com/inward/record.url?scp=79959547655&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959547655&partnerID=8YFLogxK
U2 - 10.1149/1.3582794
DO - 10.1149/1.3582794
M3 - Article
AN - SCOPUS:79959547655
VL - 14
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 7
ER -