抄録
Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | H274-H276 |
| ジャーナル | Electrochemical and Solid-State Letters |
| 巻 | 14 |
| 号 | 7 |
| DOI | |
| 出版ステータス | 出版済み - 2011 |
!!!All Science Journal Classification (ASJC) codes
- 化学工学（全般）
- 材料科学（全般）
- 物理化学および理論化学
- 電気化学
- 電子工学および電気工学