Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

Taizoh Sadoh, Masashi Kurosawa, Takashi Hagihara, Kaoru Toko, Masanobu Miyao

研究成果: ジャーナルへの寄稿記事

26 引用 (Scopus)

抄録

Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

元の言語英語
ジャーナルElectrochemical and Solid-State Letters
14
発行部数7
DOI
出版物ステータス出版済み - 6 29 2011

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Crystallization
Metals
insulators
crystallization
metals
Growth temperature
Substrates
Temperature
Catalysis
catalysis
Nucleation
high speed
nucleation
catalysts
Catalysts
nuclei

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

これを引用

Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator. / Sadoh, Taizoh; Kurosawa, Masashi; Hagihara, Takashi; Toko, Kaoru; Miyao, Masanobu.

:: Electrochemical and Solid-State Letters, 巻 14, 番号 7, 29.06.2011.

研究成果: ジャーナルへの寄稿記事

Sadoh, Taizoh ; Kurosawa, Masashi ; Hagihara, Takashi ; Toko, Kaoru ; Miyao, Masanobu. / Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator. :: Electrochemical and Solid-State Letters. 2011 ; 巻 14, 番号 7.
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