Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

Taizoh Sadoh, Masashi Kurosawa, Takashi Hagihara, Kaoru Toko, Masanobu Miyao

研究成果: ジャーナルへの寄稿学術誌査読

33 被引用数 (Scopus)

抄録

Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

本文言語英語
ページ(範囲)H274-H276
ジャーナルElectrochemical and Solid-State Letters
14
7
DOI
出版ステータス出版済み - 2011

!!!All Science Journal Classification (ASJC) codes

  • 化学工学(全般)
  • 材料科学(全般)
  • 物理化学および理論化学
  • 電気化学
  • 電子工学および電気工学

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