Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

研究成果: ジャーナルへの寄稿学術誌査読

28 被引用数 (Scopus)

抄録

Low-temperature (∼250°C) layer exchange crystallization of poly-Si 1 - xGe x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (∼250°C, 20 h) of the a-Si 1 - xGe x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.

本文言語英語
ページ(範囲)3293-3295
ページ数3
ジャーナルThin Solid Films
520
8
DOI
出版ステータス出版済み - 2月 1 2012

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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