Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    7 被引用数 (Scopus)

    抄録

    Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O2, Ar+H2) was investigated for low-temperature Au-Au surface-activated bonding (150°C). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O2 atmospheric-pressure plasma treatment due to Au 2O3 formed on Au surface. However, by using Au microbump (diameter at the top: 5 μm, height: 2 μm, and pitch: 10 μm), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150°C) in ambient air using Ar+H2 atmospheric-pressure plasma treatment.

    本文言語英語
    ホスト出版物のタイトル2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
    ページ475-477
    ページ数3
    DOI
    出版ステータス出版済み - 11 25 2009
    イベント2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 - Beijing, 中国
    継続期間: 8 10 20098 13 2009

    出版物シリーズ

    名前2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

    その他

    その他2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
    Country中国
    CityBeijing
    Period8/10/098/13/09

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

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