Low temperature crystallization of a-SiGe on insulating films for thin film transistor application

Masanobu Miyao, Hiroshi Kanno, Isao Tsunoda, Taizoh Sadoh

研究成果: Contribution to journalConference article査読

抄録

Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.

本文言語英語
ページ(範囲)613-626
ページ数14
ジャーナルECS Transactions
3
7
DOI
出版ステータス出版済み - 12 1 2006
イベントSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, メキシコ
継続期間: 10 29 200611 3 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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