Defect chemistry of oxides at lower temperatures, e.g. room temperature, especially for electronics applications is analyzed, at which the oxygen exchange equilibrium reaction is no longer reversible but the internal ionization equilibrium reactions, in particular electronic transfer processes, are still reversible. Defect concentrations at such a temperature can be derived numerically as well as analytically. It is pointed out that the low temperature defect chemistry offers a quantitative basis to manipulate charge carrier and defect concentrations and related physical properties of oxide electroceramics.
|ジャーナル||Key Engineering Materials|
|出版ステータス||出版済み - 1月 1 1999|
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