Low-temperature defect chemistry of oxides. II. Analytical relations

K. Sasaki, J. Maier

研究成果: Contribution to journalArticle査読

27 被引用数 (Scopus)

抄録

The low-temperature defect chemistry of oxides is considered, characterized by frozen-in interaction with the ambient oxygen and reversibility of internal interactions, in particular the redistribution of electronic carriers. Analytical relations describing ionic and electronic defect concentrations are derived for various conditions. The presence of redox-active, i.e., deep-level, dopants proves to be of special interest in this context. The analytical relations permit the detailed discussion of the dependencies of the charge carrier concentrations on the control parameters. Such analytical relations are useful for understanding and tailoring defect concentrations and thus related properties of electroceramics.

本文言語英語
ページ(範囲)5434-5443
ページ数10
ジャーナルJournal of Applied Physics
86
10
DOI
出版ステータス出版済み - 11 15 1999

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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