Low-temperature direct flip-chip bonding for integrated micro-systems

E. Higurashi, T. Suga, Renshi Sawada

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抜粋

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

元の言語英語
ホスト出版物のタイトル18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
ページ121-122
ページ数2
2005
DOI
出版物ステータス出版済み - 2005
イベント18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, オーストラリア
継続期間: 10 22 200510 28 2005

その他

その他18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
オーストラリア
Sydney
期間10/22/0510/28/05

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • これを引用

    Higurashi, E., Suga, T., & Sawada, R. (2005). Low-temperature direct flip-chip bonding for integrated micro-systems. : 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (巻 2005, pp. 121-122). [1547908] https://doi.org/10.1109/LEOS.2005.1547908