Low-temperature direct flip-chip bonding for integrated micro-systems

E. Higurashi; T. Suga; Renshi Sawada

doi:10.1109/LEOS.2005.1547908

Low-temperature direct flip-chip bonding for integrated micro-systems

E. Higurashi, T. Suga, Renshi Sawada

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

1 被引用数 (Scopus)

抄録

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

本文言語	英語
ホスト出版物のタイトル	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
ページ	121-122
ページ数	2
巻	2005
DOI	https://doi.org/10.1109/LEOS.2005.1547908
出版ステータス	出版済み - 2005
イベント	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, オーストラリア継続期間: 10月 22 2005 → 10月 28 2005

その他

その他	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
国/地域	オーストラリア
City	Sydney
Period	10/22/05 → 10/28/05

!!!All Science Journal Classification (ASJC) codes

産業および生産工学
制御およびシステム工学
電子工学および電気工学

文献へのアクセス

10.1109/LEOS.2005.1547908

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引用スタイル

Higurashi, E, Suga, T & Sawada, R 2005, Low-temperature direct flip-chip bonding for integrated micro-systems. in 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. vol. 2005, 1547908, pp. 121-122, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, オーストラリア, 10/22/05. https://doi.org/10.1109/LEOS.2005.1547908

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title = "Low-temperature direct flip-chip bonding for integrated micro-systems",

abstract = "This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.",

author = "E. Higurashi and T. Suga and Renshi Sawada",

year = "2005",

doi = "10.1109/LEOS.2005.1547908",

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volume = "2005",

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booktitle = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005",

note = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 ; Conference date: 22-10-2005 Through 28-10-2005",

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AU - Higurashi, E.

AU - Suga, T.

AU - Sawada, Renshi

PY - 2005

Y1 - 2005

N2 - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

AB - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

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DO - 10.1109/LEOS.2005.1547908

M3 - Conference contribution

AN - SCOPUS:33751323440

SN - 0780392175

SN - 9780780392175

VL - 2005

SP - 121

EP - 122

BT - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

T2 - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

Y2 - 22 October 2005 through 28 October 2005

ER -

Low-temperature direct flip-chip bonding for integrated micro-systems

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!!!All Science Journal Classification (ASJC) codes

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