抄録
This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
本文言語 | 英語 |
---|---|
ホスト出版物のタイトル | 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 |
ページ | 121-122 |
ページ数 | 2 |
巻 | 2005 |
DOI | |
出版ステータス | 出版済み - 2005 |
イベント | 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, オーストラリア 継続期間: 10月 22 2005 → 10月 28 2005 |
その他
その他 | 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 |
---|---|
国/地域 | オーストラリア |
City | Sydney |
Period | 10/22/05 → 10/28/05 |
!!!All Science Journal Classification (ASJC) codes
- 産業および生産工学
- 制御およびシステム工学
- 電子工学および電気工学