TY - JOUR
T1 - Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge
AU - Ueda, Koji
AU - Ando, Yuichiro
AU - Kumano, Mamoru
AU - Sadoh, Taizoh
AU - Maeda, Yoshihito
AU - Miyao, Masanobu
PY - 2008/7/30
Y1 - 2008/7/30
N2 - Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.
AB - Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.
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U2 - 10.1016/j.apsusc.2008.02.139
DO - 10.1016/j.apsusc.2008.02.139
M3 - Article
AN - SCOPUS:45049085654
SN - 0169-4332
VL - 254
SP - 6215
EP - 6217
JO - Applied Surface Science
JF - Applied Surface Science
IS - 19
ER -