Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating (シリコン材料・デバイス)

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

文献へのアクセス

@article{b0795b103ce040c891b0d68cf8363820,

title = "Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating (シリコン材料・デバイス)",

author = "Kaname Imokawa and Nozomu Tanaka and Akira Suwa and Daisuke Nakamura and Taizoh Sadoh and Tetsuya Goto and Hiroshi Ikenoue",

year = "2018",

month = oct,

day = "17",

language = "English",

volume = "118",

pages = "11--14",

journal = "IEICE technical report",

issn = "0913-5685",

publisher = "一般社団法人電子情報通信学会",

number = "241",

}

TY - JOUR

T1 - Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating (シリコン材料・デバイス)

AU - Imokawa, Kaname

AU - Tanaka, Nozomu

AU - Suwa, Akira

AU - Nakamura, Daisuke

AU - Sadoh, Taizoh

AU - Goto, Tetsuya

AU - Ikenoue, Hiroshi

PY - 2018/10/17

Y1 - 2018/10/17

M3 - Article

VL - 118

SP - 11

EP - 14

JO - IEICE technical report

JF - IEICE technical report

SN - 0913-5685

IS - 241

ER -