抄録
Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 1073-1078 |
| ページ数 | 6 |
| ジャーナル | IEEJ Transactions on Electronics, Information and Systems |
| 巻 | 126 |
| 発行部数 | 9 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2006 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
これを引用
Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.
：: IEEJ Transactions on Electronics, Information and Systems, 巻 126, 番号 9, 01.01.2006, p. 1073-1078.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT
AU - Kanno, Hiroshi
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.
AB - Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.
UR - http://www.scopus.com/inward/record.url?scp=33748533782&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748533782&partnerID=8YFLogxK
U2 - 10.1541/ieejeiss.126.1073
DO - 10.1541/ieejeiss.126.1073
M3 - Article
AN - SCOPUS:33748533782
VL - 126
SP - 1073
EP - 1078
JO - IEEJ Transactions on Electronics, Information and Systems
JF - IEEJ Transactions on Electronics, Information and Systems
SN - 0385-4221
IS - 9
ER -