抄録
A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 5314-5316 |
| ページ数 | 3 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes |
| 巻 | 38 |
| 発行部数 | 9 B |
| 出版物ステータス | 出版済み - 1999 |
| 外部発表 | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
これを引用
Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method. / Horiguchi, Atsushi; Watanabe, Yukio.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 巻 38, 番号 9 B, 1999, p. 5314-5316.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method
AU - Horiguchi, Atsushi
AU - Watanabe, Yukio
PY - 1999
Y1 - 1999
N2 - A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.
AB - A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.
UR - http://www.scopus.com/inward/record.url?scp=0033318157&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033318157&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033318157
VL - 38
SP - 5314
EP - 5316
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 B
ER -