Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method

Atsushi Horiguchi, Yukio Watanabe

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

抄録

A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

元の言語英語
ページ(範囲)5314-5316
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
38
発行部数9 B
出版物ステータス出版済み - 1999
外部発表Yes

Fingerprint

Growth temperature
Molecular beam epitaxy
Sputtering
Atomic force microscopy
molecular beam epitaxy
sputtering
atomic force microscopy
Annealing
Thin films
annealing
Substrates
thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

@article{cec8ec21febb40708bf2e58077fe48ea,
title = "Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method",
abstract = "A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.",
author = "Atsushi Horiguchi and Yukio Watanabe",
year = "1999",
language = "English",
volume = "38",
pages = "5314--5316",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "9 B",

}

TY - JOUR

T1 - Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method

AU - Horiguchi, Atsushi

AU - Watanabe, Yukio

PY - 1999

Y1 - 1999

N2 - A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

AB - A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

UR - http://www.scopus.com/inward/record.url?scp=0033318157&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033318157&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033318157

VL - 38

SP - 5314

EP - 5316

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 B

ER -