Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

Ning Han, Fengyun Wang, Zaixing Yang, Sen Po Yip, Guofa Dong, Hao Lin, Ming Fang, Tak Fu Hung, Johnny C. Ho

研究成果: ジャーナルへの寄稿学術誌査読

16 被引用数 (Scopus)

抄録

Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 107 Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition. PACS: 77.55.D; 61.46.Km; 78.40.Fy

本文言語英語
論文番号347
ページ(範囲)1-6
ページ数6
ジャーナルNanoscale Research Letters
9
1
DOI
出版ステータス出版済み - 2014
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学

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