Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

Taizoh Sadoh, R. Aoki, T. Tanaka, J. H. Park, M. Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

A technique for low-temperature (≤300°C) formation of largegrain (≥10 μm) Ge-rich SiGe crystals on insulator, whose orientation and position are controlled, should be developed to realize flexible electronics. To achieve this, the gold-induced layerexchange crystallization technique using a-SiGe/Au stacked structures has been investigated. By introduction of diffusion control layers into the a-SiGe/Au interface, (111)-oriented largegrain Ge-rich SiGe crystals are achieved on insulating substrates at low temperatures (≤300°C). Moreover, position control of largegrain crystals becomes possible by patterning the diffusion control layers. This low-temperature growth technique is expected to be useful to realize flexible electronics.

本文言語英語
ホスト出版物のタイトルThin Film Transistors 13, TFT 13
編集者Y. Kuo
出版社Electrochemical Society Inc.
ページ95-103
ページ数9
75
10
ISBN(電子版)9781607685395
DOI
出版ステータス出版済み - 1 1 2016
イベントSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, 米国
継続期間: 10 2 201610 7 2016

その他

その他Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
国/地域米国
CityHonolulu
Period10/2/1610/7/16

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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