Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Yu-ichiro Ando; Koji Ueda; Mamoru Kumano; Taizoh Sadoh; Kazumasa Narumi; Yoshihito Maeda; Masanobu Miyao

doi:10.1093/ietele/e91-c.5.708

Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

抄録

Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometric condition. From TEM observation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge structures was guaranteed up to 400°C. These results suggested that growth at a low temperature (<200°C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

本文言語	英語
ページ（範囲）	708-711
ページ数	4
ジャーナル	IEICE Transactions on Electronics
巻	91
号	5
DOI	https://doi.org/10.1093/ietele/e91-c.5.708
出版ステータス	出版済み - 5月 1 2008

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10.1093/ietele/e91-c.5.708

https://doi.org/10.1093/ietele/e91-c.5.708

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title = "Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application",

abstract = "Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometric condition. From TEM observation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge structures was guaranteed up to 400°C. These results suggested that growth at a low temperature (<200°C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.",

author = "Yu-ichiro Ando and Koji Ueda and Mamoru Kumano and Taizoh Sadoh and Kazumasa Narumi and Yoshihito Maeda and Masanobu Miyao",

year = "2008",

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T1 - Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

AU - Ando, Yu-ichiro

AU - Ueda, Koji

AU - Kumano, Mamoru

AU - Sadoh, Taizoh

AU - Narumi, Kazumasa

AU - Maeda, Yoshihito

AU - Miyao, Masanobu

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometric condition. From TEM observation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge structures was guaranteed up to 400°C. These results suggested that growth at a low temperature (<200°C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

AB - Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometric condition. From TEM observation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge structures was guaranteed up to 400°C. These results suggested that growth at a low temperature (<200°C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

U2 - 10.1093/ietele/e91-c.5.708

DO - 10.1093/ietele/e91-c.5.708

M3 - Article

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VL - 91

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EP - 711

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 5

ER -

Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

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