Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance

T. Kikuchi, K. Imokawa, A. Ikeda, Daisuke Nakamura, T. Asano, Hiroshi Ikenoue

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (∼1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ωi1/2ycm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (∼1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ωi1/2ycm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.

元の言語英語
ホスト出版物のタイトルLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV
編集者Gediminas Raciukaitis, Carlos Molpeceres, Tetsuya Makimura
出版者SPIE
ISBN(電子版)9781510624528
DOI
出版物ステータス出版済み - 1 1 2019
イベントLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019 - San Francisco, 米国
継続期間: 2 4 20192 6 2019

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10905
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

会議

会議Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019
米国
San Francisco
期間2/4/192/6/19

Fingerprint

Contact Resistance
Contact resistance
contact resistance
Silicon carbide
silicon carbides
Silicon
Doping (additives)
Laser
Lasers
Substrate
lasers
Laser Ablation
Irradiation
Temperature
laser ablation
Laser ablation
Substrates
Laser beam effects
Electrode
Excimer Laser

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Kikuchi, T., Imokawa, K., Ikeda, A., Nakamura, D., Asano, T., & Ikenoue, H. (2019). Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance. : G. Raciukaitis, C. Molpeceres, & T. Makimura (版), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV [109050Z] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 10905). SPIE. https://doi.org/10.1117/12.2509191

Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance. / Kikuchi, T.; Imokawa, K.; Ikeda, A.; Nakamura, Daisuke; Asano, T.; Ikenoue, Hiroshi.

Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV. 版 / Gediminas Raciukaitis; Carlos Molpeceres; Tetsuya Makimura. SPIE, 2019. 109050Z (Proceedings of SPIE - The International Society for Optical Engineering; 巻 10905).

研究成果: 著書/レポートタイプへの貢献会議での発言

Kikuchi, T, Imokawa, K, Ikeda, A, Nakamura, D, Asano, T & Ikenoue, H 2019, Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance. : G Raciukaitis, C Molpeceres & T Makimura (版), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV., 109050Z, Proceedings of SPIE - The International Society for Optical Engineering, 巻. 10905, SPIE, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019, San Francisco, 米国, 2/4/19. https://doi.org/10.1117/12.2509191
Kikuchi T, Imokawa K, Ikeda A, Nakamura D, Asano T, Ikenoue H. Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance. : Raciukaitis G, Molpeceres C, Makimura T, 編集者, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV. SPIE. 2019. 109050Z. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2509191
Kikuchi, T. ; Imokawa, K. ; Ikeda, A. ; Nakamura, Daisuke ; Asano, T. ; Ikenoue, Hiroshi. / Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV. 編集者 / Gediminas Raciukaitis ; Carlos Molpeceres ; Tetsuya Makimura. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (∼1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ωi1/2ycm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (∼1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ωi1/2ycm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.",
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AU - Ikenoue, Hiroshi

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N2 - We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (∼1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ωi1/2ycm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (∼1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ωi1/2ycm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.

AB - We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (∼1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ωi1/2ycm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (∼1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ωi1/2ycm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.

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