抄録
Low-temperature (≤250°C) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metalinduced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250°C and 150°C, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)-or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.
本文言語 | 英語 |
---|---|
ページ(範囲) | 213-221 |
ページ数 | 9 |
ジャーナル | ECS Transactions |
巻 | 58 |
号 | 9 |
DOI | |
出版ステータス | 出版済み - 2013 |
!!!All Science Journal Classification (ASJC) codes
- 工学(全般)