Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics

T. Sadoh, J. H. Park, M. Kurosawa, M. Miyao

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

Low-temperature (≤250°C) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metalinduced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250°C and 150°C, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)-or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.

本文言語英語
ページ(範囲)213-221
ページ数9
ジャーナルECS Transactions
58
9
DOI
出版ステータス出版済み - 2013

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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