Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ

Li Li, Akihiro Ikeda, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

A thermal oxidation method with SrTi1-xMgxO3-δ used as an oxidation catalyst is proposed to oxidize the 4H-SiC surface at low temperatures. The rate constant for the interfacial reaction of the 4H-SiC(0001) Si-face at 800 C is enhanced by approximately two orders of magnitude from that of conventional dry oxidation. The method enables the production of a gate SiO2 layer of a MOSFET at temperatures below 900 C. Electrical characterization of the MOS interface suggests that the catalytic oxidation produces similar interface state densities to those produced by conventional dry oxidation in the energy range of 0.2-0.5 eV from the conduction band edge at 1300 C.

元の言語英語
記事番号108001
ジャーナルJapanese Journal of Applied Physics
55
発行部数10
DOI
出版物ステータス出版済み - 10 1 2016

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catalysts
Oxidation
oxidation
Catalysts
Temperature
Interface states
Catalytic oxidation
Surface chemistry
Conduction bands
Rate constants
conduction bands
field effect transistors
temperature
energy
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ. / Li, Li; Ikeda, Akihiro; Asano, Tanemasa.

:: Japanese Journal of Applied Physics, 巻 55, 番号 10, 108001, 01.10.2016.

研究成果: ジャーナルへの寄稿記事

Li, Li ; Ikeda, Akihiro ; Asano, Tanemasa. / Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ. :: Japanese Journal of Applied Physics. 2016 ; 巻 55, 番号 10.
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