Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抜粋

We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

元の言語英語
ホスト出版物のタイトル2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ313-315
ページ数3
ISBN(印刷物)9781538637111
DOI
出版物ステータス出版済み - 7 26 2018
イベント2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本
継続期間: 3 13 20183 16 2018

出版物シリーズ

名前2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

その他

その他2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
日本
Kobe
期間3/13/183/16/18

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Takahashi, K., Ikenoue, H., Sakashita, M., Nakatsuka, O., Zaima, S., & Kurosawa, M. (2018). Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator. : 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 313-315). [8421488] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421488